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| FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET November2009 FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET 500V, 4A, 2.0 Features * RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2A * Low gate charge ( Typ. 11nC) * Low Crss ( Typ. 5pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * RoHS compliant Ultra FRFET tm TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DOMS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutationmode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D GDS TO-220 FDP Series GD S TO-220F FDPF Series (potted) G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 85 0.67 -55 to +150 300 4 2.4 16 216 4 8.5 4.5 28 0.22 FDP5N50U FDPF5N50UT 500 30 4* 2.4* 16* Units V V A A mJ A mJ V/ns W W/oC oC oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP5N50U 1.4 0.5 62.5 FDPF5N50UT 4.5 62.5 oC/W Units (c)2009 Fairchild Semiconductor Corporation FDP5N50U / FDPF5N50UT Rev. A-1 1 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDP5N50U FDPF5N50UT Device FDP5N50U FDPF5N50UT Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25 C VDS = 500V, VGS = 0V VDS = 400V, TC = 125oC VGS = 30V, VDS = 0V o 500 - 0.7 - 25 250 100 V V/oC A nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 2A VDS = 40V, ID = 2A (Note 4) 3 - - 1.65 4.8 5 2 - V S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 400V, ID = 4A VGS = 10V (Note 4, 5) VDS = 25V, VGS = 0V f = 1MHz - 485 65 5 11 3 5 650 90 8 15 - pF pF pF nC nC nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 4A RG = 25 (Note 4, 5) - 14 21 27 20 38 52 64 50 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 4A VGS = 0V, ISD = 4A dIF/dt = 100A/s (Note 4) - 36 33 4 16 1.6 - A A V ns nC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 27mH, IAS = 4A, VDD = 50V, RG = 25, Starting TJ = 25C 3: ISD 4A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP5N50U / FDPF5N50UT Rev. A-1 2 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Typical Performance Characteristics Figure 1. On-Region Characteristics 10 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Figure 2. Transfer Characteristics 10 ID,Drain Current[A] 1 ID,Drain Current[A] 150 C 25 C o o 1 0.1 *Notes: 1. 250s Pulse Test 2. TC = 25 C o *Notes: 1. VDS = 20V 2. 250s Pulse Test 0.02 0.1 0.1 30 1 10 VDS,Drain-Source Voltage[V] 4 5 6 7 VGS,Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2.6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 30 RDS(ON) [], Drain-Source On-Resistance IS, Reverse Drain Current [A] 150 C o 2.2 VGS = 10V VGS = 20V 10 25 C o 1.8 *Note: TJ = 25 C o *Notes: 1. VGS = 0V 1.4 0 6 12 ID, Drain Current [A] 18 1 0.4 2. 250s Pulse Test 1.0 1.6 VSD, Body Diode Forward Voltage [V] 2.2 Figure 5. Capacitance Characteristics 1000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VDS = 100V VDS = 250V VDS = 400V 800 Capacitances [pF] 8 600 Ciss *Note: 1. VGS = 0V 2. f = 1MHz 6 400 Coss 4 200 Crss 2 *Note: ID = 4A 0 0.1 1 10 VDS, Drain-Source Voltage [V] 30 0 0 4 8 Qg, Total Gate Charge [nC] 12 FDP5N50U / FDPF5N50UT Rev. A-1 3 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 8. Maximum Safe Operating Area - FDP5N50U 30 50s 10 1.1 ID, Drain Current [A] 100s 1ms 10ms 1 Operation in This Area is Limited by R DS(on) DC 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250A 0.1 *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 175 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 9. Maximum Safe Operating Area - FDPF5N50UT 30 30s Figure 10. Maximum Drain Current vs. Case Temperature 5 10 ID, Drain Current [A] 100s 4 10ms ID, Drain Current [A] 1ms 1 DC 3 Operation in This Area is Limited by R DS(on) 2 0.1 *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 1 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve - FDP5N50U 3 Thermal Response [ZJC] 1 0.5 0.2 PDM 0.1 0.1 0.05 0.02 0.01 Single pulse t1 t2 *Notes: 1. ZJC(t) = 1.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) o 0.01 -5 10 10 -4 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 10 0 10 1 FDP5N50U / FDPF5N50UT Rev. A-1 4 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve - FDPF5N50UT 10 Thermal Response [ZJC] 0.5 1 0.2 0.1 0.05 PDM t1 t2 0.1 0.02 0.01 *Notes: 0.01 Single pulse 1. ZJC(t) = 4.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) -4 o 0.003 -5 10 10 10 -3 10 10 10 10 Rectangular Pulse Duration [sec] -2 -1 0 1 10 2 10 3 FDP5N50U / FDPF5N50UT Rev. A-1 5 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP5N50U / FDPF5N50UT Rev. A-1 6 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V + DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS * d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id t h D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v /d t V SD V DD B o d y D io d e F o r w a r d V o lta g e D r o p FDP5N50U / FDPF5N50UT Rev. A-1 7 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Mechanical Dimensions TO-220 FDP5N50U / FDPF5N50UT Rev. A-1 8 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET Package Dimensions (Continued) TO-220F * Front/Back Side Isolation Voltage : 2500V Dimensions in Millimeters FDP5N50U / FDPF5N50UT Rev. A-1 9 www.fairchildsemi.com FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. FPSTM AccuPowerTM PowerTrench(R) The Power Franchise(R) PowerXSTM F-PFSTM Auto-SPMTM (R) FRFET(R) Programmable Active DroopTM Build it NowTM SM (R) QFET CorePLUSTM Global Power Resource TinyBoostTM CorePOWERTM Green FPSTM QSTM TinyBuckTM CROSSVOLTTM Green FPSTM e-SeriesTM Quiet SeriesTM TinyCalcTM CTLTM GmaxTM RapidConfigureTM TinyLogic(R) Current Transfer LogicTM GTOTM (R) TINYOPTOTM EcoSPARK IntelliMAXTM TM TinyPowerTM EfficentMaxTM Saving our world, 1mW /W /kW at a timeTM ISOPLANARTM TinyPWMTM EZSWITCHTM* SmartMaxTM MegaBuckTM TinyWireTM TM* SMART STARTTM MICROCOUPLERTM TriFault DetectTM SPM(R) MicroFETTM TRUECURRENTTM* STEALTHTM MicroPakTM (R) SuperFETTM MillerDriveTM Fairchild(R) SuperSOTTM-3 MotionMaxTM Fairchild Semiconductor(R) SuperSOTTM-6 UHC(R) Motion-SPMTM (R) FACT Quiet SeriesTM Ultra FRFETTM SuperSOTTM-8 OPTOLOGIC FACT(R) UniFETTM OPTOPLANAR(R) SupreMOSTM (R) FAST(R) VCXTM SyncFETTM FastvCoreTM VisualMaxTM Sync-LockTM FETBenchTM XSTM (R)* PDP SPMTM FlashWriter(R) * Power-SPMTM tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDP5N50U / FDPF5N50UT Rev. A-1 10 www.fairchildsemi.com |
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